Quasi-optical spatial power combination by means of planar arrays of semiconductor devices offer a promising approach to the realization of inexpensive, reliable, and compact systems for watt-level operations at millimeter and submillimeter frequencies [1,2]. Current efforts are focused on frequency tripling to 99 GHz using quantum well resonant tunneling diode (RTD) arrays, whose intrinsic device capabilities should permit the future extension of this work to several THz [3]. The quantum well RTD is an excellent candidate for a frequency tripler. Because it employs two types of nonlinear impedances for harmonic generation, the I-V and C-V characteristics, the diode can operate as a varistor as well as a varactor. Furthermore, there is a negative differential resistance (NDR) region in the I-V characteristic which allows the generation efficiency to the n th harmonic to be higher than the maximum conversion efficiency of n -2 of existing resistive multipliers usually based on Schottky barrier diodes [4]. The I-V characteristic is also antisymmetric about the origin which leads to the absence of even harmonics.
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