14 December 1992 A high precision reflectometer for the study of optical properties of materials in the submillimeter
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19291B (1992) https://doi.org/10.1117/12.2298164
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
A high precision reflectometer has been developed to measure the reflectivity (R) of various metals in the submillimeter frequency regime of the spectrum from 20 cm-1 - 85 cm-1. A high-purity (p ?.. 40K Ohm-cm) single crystal silicon etalon was designed and used as the reflection standard. Optical properties of the silicon were characterized using a submillimeter ellipsometer specifically designed for materials characterization at these frequencies. This enabled the reflectivity of the silicon to be calculated to a relatively high degree and thus achieve a final measurement precision for R of - 0.1%.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. J. Gatesman, "A high precision reflectometer for the study of optical properties of materials in the submillimeter", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19291B (14 December 1992); doi: 10.1117/12.2298164; https://doi.org/10.1117/12.2298164
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