14 December 1992 A high precision reflectometer for the study of optical properties of materials in the submillimeter
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19291B (1992) https://doi.org/10.1117/12.2298164
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
A high precision reflectometer has been developed to measure the reflectivity (R) of various metals in the submillimeter frequency regime of the spectrum from 20 cm-1 - 85 cm-1. A high-purity (p ?.. 40K Ohm-cm) single crystal silicon etalon was designed and used as the reflection standard. Optical properties of the silicon were characterized using a submillimeter ellipsometer specifically designed for materials characterization at these frequencies. This enabled the reflectivity of the silicon to be calculated to a relatively high degree and thus achieve a final measurement precision for R of - 0.1%.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. J. Gatesman, A. J. Gatesman, } "A high precision reflectometer for the study of optical properties of materials in the submillimeter", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19291B (14 December 1992); doi: 10.1117/12.2298164; https://doi.org/10.1117/12.2298164
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