14 December 1992 Characterization of 100 GHz GaAs/alGaAs multiquantum well avalanche transit time devices
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19291E (1992) https://doi.org/10.1117/12.2298167
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
MQW structures have been proposed to enhance the nonlinearity of the avalanche process tnd reduce the ionization rate saturation limitations in GaAs [1-3]. The dramatic reduction of the nonlinearity of the avalanche process for conventional GaAs IMPATT devices causes the fall-off in efficiency at high frequencies. We have successfully achieved both pulsed and C.W. operation of MQW (Multiquantum Well) IMPATT oscillators at W-Band frequencies. Pre- liminary results yield, in a non-optimized circuit, 127 mW (2.2% in efficiency) pulsed operation at 94 GHz for 480 mA bias current and 1.1 mW C.W. power at 103.8 GHz for 320 mA bias current. The pulse width is 200 ns and duty circle is 0.02% for the pulsed testing. Experimental efforts are underway to optimize the device-circuit impedance matching and much higher powers are expected for the MQW IMPATT structures.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. C. Meng, "Characterization of 100 GHz GaAs/alGaAs multiquantum well avalanche transit time devices", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19291E (14 December 1992); doi: 10.1117/12.2298167; https://doi.org/10.1117/12.2298167
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