14 December 1992 Linewidth of the p-ge laser
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19292K (1992) https://doi.org/10.1117/12.2298209
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
Active samples were cut from monocrystaline Ge(Ga doped) with an impurity con- centration of NA=7 x1013 cm-3 in the form of a rectangular parallelepiped, cooled by liquid helium and placed in a superconducting magnet. The magnetic field was directed along the samples' long axis. A pulsed electric field was applied to the lateral sides through evaporated ohmic contacts, thus E was orthogonal to H. The laser generation in the far-infrared was due to the gain on intersubband hole optical transitions.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. N. Shastin, V. N. Shastin, } "Linewidth of the p-ge laser", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292K (14 December 1992); doi: 10.1117/12.2298209; https://doi.org/10.1117/12.2298209
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