14 December 1992 Antenna-coupled thin-film nanometer metal-oxide-metal infrared diodes
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19292R (1992) https://doi.org/10.1117/12.2298216
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
We manufacture Ni-NiO-Ni diodes with minimum contact areas of 240 • 240 nm2 mounted on 380 1.1m Si wafers and attached to thin-film dipole antennas of 240 nm width and 1.6-22 jim length. They are tested e.g. with polarized 10 pm CO2-laser radi- ation. Their efficiency is improved by replacing the 380 pm Si substrate by 3.7-5.8 pm membranes and by other means.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Wilke, I. Wilke, } "Antenna-coupled thin-film nanometer metal-oxide-metal infrared diodes", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292R (14 December 1992); doi: 10.1117/12.2298216; https://doi.org/10.1117/12.2298216
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