14 December 1992 Fabrication of submicron GaAs Schottky diodes for mixers/detectors operating in the submillimetre wave region
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19292X (1992) https://doi.org/10.1117/12.2298222
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
Low noise and high video sensitivity mixers/detectors operating in the submillimetre wave region have been developed. These devices use an 0.4µm diameter GaAs Schottky barrier diode as the mixing/detecting element. Electron beam lithography and electron cyclotron resonance plasma etching are employed in the fabrication process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Suzuki, "Fabrication of submicron GaAs Schottky diodes for mixers/detectors operating in the submillimetre wave region", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292X (14 December 1992); doi: 10.1117/12.2298222; https://doi.org/10.1117/12.2298222
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