14 December 1992 Far infrared measurements on doped GaAs/alGaAs multiple quantum wells
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 192933 (1992) https://doi.org/10.1117/12.2298228
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
A series of GaAs/AlGaAs multiple quantum well (MQW) structures, modulation or antimodulation doped, has been grown by molecular beam epitaxy. The samples were identical apart from the doping, the level of which was varied between 1.5 x 1012 cm-2 and 9 x 1012 am-2; in each case the doping was carried out in such a way as to retain approximately square potentials in the wells. Far infrared measurements on the plasma response were made using dispersive Fourier transform spectroscopy (DFTS), oblique incidence reflectivity, and attenuated total reflection (ATR) spectroscopy.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. K. Kang, S. K. Kang, } "Far infrared measurements on doped GaAs/alGaAs multiple quantum wells", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 192933 (14 December 1992); doi: 10.1117/12.2298228; https://doi.org/10.1117/12.2298228
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