14 December 1992 Far infrared study of interface broadening in GaAs/alas superlattices
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 192945 (1992) https://doi.org/10.1117/12.2298266
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
Interface roughness in semiconductor superlattices markedly affects the extent of phonon confinement and this, in turn, affects the frequencies of confined optical phonon modes. It has recently been shown [1,2] that measurements of these confined mode frequencies by Raman and far infrared spectroscopy can be used, in conjunction with a linear chain model which has been extended from Chang and Mitra's modified random element isodisplacement model [3] to incorporate interface roughness, to give a quantitative measure of interface broadening.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Z. Mamun, A. Z. Mamun, } "Far infrared study of interface broadening in GaAs/alas superlattices", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 192945 (14 December 1992); doi: 10.1117/12.2298266; https://doi.org/10.1117/12.2298266
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