14 December 1992 Surface emitting characteristics of silicon waveguides
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Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19295S (1992) https://doi.org/10.1117/12.2298325
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States
Abstract
The objective of the present paper is to demonstrate surface emitting characteristics of silicon waveguides in the millimeter-wave frequency band. Waveguides used in the experiment are rectangular slabs of high resistivity silicon ( 30,000 ohm.cm). A series of perturbations on the silicon waveguide are required to provide a radiating surface. The second Bragg frequency is fixed at 90 GHz from which the grating period, height and the duty cycle were calculated. A rectangular grating with period A = 1.08 mm, height = 0.35 mm, and duty cycle = 0.46 was etched on the surface of the silicon slab. The ends of the waveguide were tapered for efficient coupling of power to and from the metallic waveguides. Experiments are performed to measure the attenuation, dispersion and the radiation characteristics of the said waveguides. The test setup was' used to monitor the frequency, radiation angle, and the radiated power. Measurements are made over a band of frequencies around the second Bragg frequency. We have scanned the detector from 88-95 GHz and were able to observe the change in the attenuation constant, dispersion relation and the far-field radiation pattern. The observed experimental results are found to be in good agreement with their theoretical counterparts. From these results we were able to verify the grating theory.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Urimindi, "Surface emitting characteristics of silicon waveguides", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19295S (14 December 1992); doi: 10.1117/12.2298325; https://doi.org/10.1117/12.2298325
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