This paper reports recent progress by the authors in two distinct charge coupled device (CCD) technology areas. The first technology area is high frame rate, multi-port, frame transfer imagers. A 16-port, 512 X 512, split frame transfer imager and a 32-port, 1024 X 1024, split frame transfer imager are described. The thinned, backside illuminated devices feature on-chip correlated double sampling, buried blooming drains, and a room temperature dark current of less than 50 pA/cm2, without surface accumulation. The second technology area is vacuum ultraviolet (UV) frame transfer imagers. A developmental 1024 X 640 frame transfer imager with 20% quantum efficiency at 140 nm is described. The device is fabricated in a p-channel CCD process, thinned for backside illumination, and utilizes special packaging to achieve stable UV response.