13 August 1993 Dependence of IR optical properties of bulk-doped silicon on carrier concentration
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Abstract
The infrared optical constants (index of refraction and extinction coefficient) and reflectance of bulk-doped n-silicon are calculated for electron concentrations up to 1021 cm-3. These calculations are based on generalized Drude-Lorentz form of dynamic dielectric function and current relaxation approach. A nonmonotonic behavior of IR absorption versus electron concentration is found. A connection between the theoretical results and available experimental data is discussed.
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Shlomo Hava, Shlomo Hava, Mark Auslender, Mark Auslender, } "Dependence of IR optical properties of bulk-doped silicon on carrier concentration", Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); doi: 10.1117/12.151095; https://doi.org/10.1117/12.151095
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