11 May 1993 Influence of thermal treatment on photoluminescence of porous Si
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Proceedings Volume 1979, 1992 International Conference on Lasers and Optoelectronics; (1993) https://doi.org/10.1117/12.144175
Event: 1992 International Conference on Lasers and Optoelectronics, 1992, Bejing, China
Abstract
In this paper we show that PL intensity of porous Si is critically dependent on the behavior of the thermal treatment of porous Si, prepared by anodization, which was carried out in 20% HF solution at a current density of 50 mA/cm2, then annealed at 450 degree(s)C for 20 minutes. The PL results show that the PL intensity of porous Si annealed was degraded by more than an order of magnitude. Some samples made by the same method were covered with Si3N4 or SiO2, no noticeable degradation of their PL intensity was found. The increase of bandwidth and the shift of PL peak positions were also observed. Obviously, the dielectrics, covering porous Si, prevent the degradation of PL whose mechanism is also discussed.
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Peiyi Chen, Yimin Chen, Qi Xiang, Zhimin Tan, Zhijian Li, Liying Han, Jianchen Wang, Jiancun Gao, "Influence of thermal treatment on photoluminescence of porous Si", Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144175; https://doi.org/10.1117/12.144175
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