11 May 1993 Light amplification and modulation in an InGaAsP/InP bistable laser
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Proceedings Volume 1979, 1992 International Conference on Lasers and Optoelectronics; (1993) https://doi.org/10.1117/12.144142
Event: 1992 International Conference on Lasers and Optoelectronics, 1992, Bejing, China
Abstract
In this paper, light amplification and frequency modulation of an InGaAsP/InP bistable laser are investigated experimentally. The lowest light power for switching the device on was about 2 (mu) w, and optical digital gain was larger than 30 dB with switch on time being less than 100 ps and switch off time less than 0.5 ns. Based on the rate equation, theoretical analysis shows that the width and height of an injected pulse plays an important role in switch operation and determines the delay time during switch on process along with the level of the current bias. In 3-terminal operation of the device, with the `on' pulse applying to the absorption region, the delay time can be reduced and a modulation frequency over 2 GC is expected.
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Qin Han, Qin Han, Rong Han Wu, Rong Han Wu, Quanshen Zhang, Quanshen Zhang, Honghai Gao, Honghai Gao, Wen Gao, Wen Gao, } "Light amplification and modulation in an InGaAsP/InP bistable laser", Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144142; https://doi.org/10.1117/12.144142
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