Modulation and spectral dynamics in semiconductor quantum-well lasers

Bin Zhao; T. R. Chen; Yoshiro Yamada; Y. H. Zhuang; Amnon Yariv

doi:10.1117/12.144141

11 May 1993 Modulation and spectral dynamics in semiconductor quantum-well lasers

Bin Zhao, T. R. Chen, Yoshiro Yamada, Y. H. Zhuang, Amnon Yariv

Proceedings Volume 1979, 1992 International Conference on Lasers and Optoelectronics; (1993) https://doi.org/10.1117/12.144141
Event: 1992 International Conference on Lasers and Optoelectronics, 1992, Bejing, China

Abstract

In a practical quantum well structure, the separate confinement heterostructure is usually employed to confine the optical field in the waveguide and the injected carriers in the quantum well region. The fundamental Fermi-Dirac statistics results in that, in addition to the carrier population in the quantum well region, there is also a significant carrier population in the optical confining region (referred to as the state-filling effect in the quantum well structure). The differential gain depends on the rate of increase of the quasi Fermi energies with respect to the increase of injected carrier density. The presence of upper subbands with large density of states tends to clamp the Fermi energies thus leading to a degradation in the differential gain. The state filling effect also significantly affects the amplitude-phase coupling and the spectral linewidth of quantum well lasers as a direct consequence of its influence on the differential gain.

Citation Download Citation

Bin Zhao, T. R. Chen, Yoshiro Yamada, Y. H. Zhuang, and Amnon Yariv "Modulation and spectral dynamics in semiconductor quantum-well lasers", Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); https://doi.org/10.1117/12.144141

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