11 May 1993 New achievements in ultralow-threshold semiconductor lasers
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Proceedings Volume 1979, 1992 International Conference on Lasers and Optoelectronics; (1993) https://doi.org/10.1117/12.144139
Event: 1992 International Conference on Lasers and Optoelectronics, 1992, Bejing, China
Abstract
Various semiconductor laser material system and device structures which have led to the ultralow threshold current (<EQ 1 mA) operation are reviewed with an emphasis on the quantum well (QW), especially strained QW, structures. To date, cw threshold current as low as approximately 1 mA for as cleaved lasers and 0.35 mA (pulsed 0.25 mA) for high reflectivity coated lasers are realized. These low threshold lasers also display excellent dynamic behavior, a direct current modulation bandwidth of 4.6 GHz at a bias current of only 1 mA above threshold has been demonstrated.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. R. Chen, Bin Zhao, L. E. Eng, Y. H. Zhuang, Amnon Yariv, "New achievements in ultralow-threshold semiconductor lasers", Proc. SPIE 1979, 1992 International Conference on Lasers and Optoelectronics, (11 May 1993); doi: 10.1117/12.144139; https://doi.org/10.1117/12.144139
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