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24 January 1980 Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology
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Abstract
Both pulsed and scanning cw lasers operating at wavelengths in the range 0.5-1.06 μm can be used as a method to rapidly heat the surface and underlying bulk of a semiconductor material to a precisely controlled temperature up to melting. As a result, lasers can be utilized to anneal ion-implanted layers, reduce fixed interface charge of deposited oxide films, grow surface oxides, react metal/silicon layers to form silicides and improve and control the electrical properties of deposited silicon films.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. W. Sigmon and J. F. Gibbons "Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); https://doi.org/10.1117/12.958016
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