Analyzing the thermal stability of CsI photocathodes with XPS

Kaisheng Tan; Zhiyong Pan; Fengqin Liu

doi:10.1117/12.142008

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1 April 1993 Analyzing the thermal stability of CsI photocathodes with XPS

Kaisheng Tan; Zhiyong Pan; Fengqin Liu

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Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.142008
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China

Abstract

The effects of vacuum-baking on the chemical state of CsI photocathodes are studied with x- ray photoelectron spectroscopy (XPS) in this paper. The experimental results indicate that when the vacuum-baking temperature is below 180 degree(s)C the chemical states of CsI photocathode are stable, but there is a sublimation of CsI with low rate in high vacuum. When the vacuum-baking temperature is higher than 180 degree(s)C, chemical shifts will occur.

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Kaisheng Tan, Zhiyong Pan, and Fengqin Liu "Analyzing the thermal stability of CsI photocathodes with XPS", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); https://doi.org/10.1117/12.142008

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