1 April 1993 Optimization of the GaAs-delta-doped p-i-n quantum-well APD
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Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.142005
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China
Abstract
We examine the basic design issues in the optimization of a GaAs delta-doped quantum well avalanche photodiode structure using a theoretical analysis based on an ensemble Monte Carlo simulation. The device is a variation of the p-i-n doped quantum well structure previously described in the literature. It has the same low-noise, high-gain, and high-bandwidth features as the p-i-n doped quantum well device. However, the use of delta doping provides far greater control of the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed device will operate at higher gain levels at very low noise than devices previously developed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Wang, Yang Wang, Kevin F. Brennan, Kevin F. Brennan, "Optimization of the GaAs-delta-doped p-i-n quantum-well APD", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142005; https://doi.org/10.1117/12.142005
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