1 April 1993 Study of GaAs-Cs-Sb photoemitter
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Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.142006
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China
Abstract
It is well known that the defects of the GaAs-Cs-O photocathode are the poor photoemission stability and short life at room temperature. All these defects are caused by cesium desorption from the photosurface. In this paper, for resolving the problem of cesium desorption, a new surface activation material Cs-Sb is proposed to take the place of Cs-O for reducing the cesium release from the GaAs surface. From the experimental results, the following conclusion may be obtained: using the Cs-Sb to replace the Cs-O covering the GaAs surface, the stable negative-electron-affinity (NEA) photoemitter can be prepared.
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Libin Zhao, Libin Zhao, Qing Zhou, Qing Zhou, Shouzhen Zhao, Shouzhen Zhao, Baoseng Xie, Baoseng Xie, } "Study of GaAs-Cs-Sb photoemitter", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); doi: 10.1117/12.142006; https://doi.org/10.1117/12.142006
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