Theoretic analysis of photoelectronic-imaging delay

Yisong Zou; Yudan Li; Shanfeng Hou

doi:10.1117/12.141993

1 April 1993 Theoretic analysis of photoelectronic-imaging delay

Yisong Zou, Yudan Li, Shanfeng Hou

Proceedings Volume 1982, Photoelectronic Detection and Imaging: Technology and Applications '93; (1993) https://doi.org/10.1117/12.141993
Event: Photoelectronic Detection and Imaging: Technology and Applications '93, 1993, Beijing, China

Abstract

There are some delay elements in photoelectronic imaging processes, such as phosphor screen, photoconductive target, etc., and these lead to the time delay. The former originates from the transience capture of carriers which is produced before recombination luminescence in the luminous crystal excited process, and the time dispersion of the electrons release in trap level determines the delay of the luminous delay process. Whereas, the latter originates from the lifetime dispersion of semiconductor minority carriers and the capacitive delay of scanning electron beam charging the target. It can be fairly well verified by theoretic analysis and experiment that photoelectronic imaging delay can be approximately divided into: proportionality functional delay type, exponential functional delay type, and hyperbolic functional delay type. The three kinds of delays have different temporal modulation transfer functions. In this paper, we give the concrete analysis of them.

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Yisong Zou, Yudan Li, and Shanfeng Hou "Theoretic analysis of photoelectronic-imaging delay", Proc. SPIE 1982, Photoelectronic Detection and Imaging: Technology and Applications '93, (1 April 1993); https://doi.org/10.1117/12.141993

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