26 July 1993 Optical and electro-optical investigation InP/InGaAsP buried heterostructure laser diode and fabrication of single lateral mode laser arrays on multi-channelled substrate
Author Affiliations +
Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19830M (1993) https://doi.org/10.1117/12.2308441
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
InP/InGaAsP double-channelled substrate buried heterostructure laser diodes (DCS-BH) have low threshold currents, high differential quantum efficiencies, kink-free light-current characteristics and operate in a single lateral mode at high injections. Near-field investigations showed that the light spot is nearly circular and the half maximum of the intensity distribution is about 2 µm wide. The almost Gaussian far-field intensity distribution is symmetrical. The beam angles are about 40 degree. Laser arrays containing closely spaced narrow active elements have been prepaired for high power, stable lateral mode operation. The laser array structure was grown on a multi-channelled InP substrate by single-step liquid phase epitaxy (LPE). Uniform active layer dimensions for the elements have been obtained.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Rakovics, "Optical and electro-optical investigation InP/InGaAsP buried heterostructure laser diode and fabrication of single lateral mode laser arrays on multi-channelled substrate", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19830M (26 July 1993); doi: 10.1117/12.2308441; https://doi.org/10.1117/12.2308441
PROCEEDINGS
2 PAGES


SHARE
Back to Top