26 July 1993 Super-resolution-lithography from viewpoint of partially coherent imaging theory
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19832B (1993) https://doi.org/10.1117/12.2308502
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
Line widths of about 0,3 gm and focus depths of 1,3 pm are necessary for the production of 64 M DRAM's. The aim of circuit producers is to achive these parameters with i-line equipment of optical projektion lithography ( A = 365 nm, NA ek 0,5). The resolution limit w and depth of focus 4 z for lithographic systems are given by
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Hild, "Super-resolution-lithography from viewpoint of partially coherent imaging theory", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19832B (26 July 1993); doi: 10.1117/12.2308502; https://doi.org/10.1117/12.2308502
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