23 July 1993 A laser micromachining projection microscope
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19838U (1993) https://doi.org/10.1117/12.2308737
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
Comparative investigations of monocrystalline Si doping using irradiation of xenon - filled flash lamps and halogen lamps having a broad band spectrum or cw 002 - laser have been carrried out. In present work doping of thin surface layers from boron- and phosphorus- containing emulsitone has been used. SIMS analysis, four-probe and Hall-measurements have been used for characterization of these layers. The features of the diffusion processes caused by the specificity of light sources are discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Osvay, "A laser micromachining projection microscope", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19838U (23 July 1993); doi: 10.1117/12.2308737; https://doi.org/10.1117/12.2308737
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