23 July 1993 A laser micromachining projection microscope
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19838U (1993) https://doi.org/10.1117/12.2308737
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
Comparative investigations of monocrystalline Si doping using irradiation of xenon - filled flash lamps and halogen lamps having a broad band spectrum or cw 002 - laser have been carrried out. In present work doping of thin surface layers from boron- and phosphorus- containing emulsitone has been used. SIMS analysis, four-probe and Hall-measurements have been used for characterization of these layers. The features of the diffusion processes caused by the specificity of light sources are discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Osvay, R. Osvay, } "A laser micromachining projection microscope", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19838U (23 July 1993); doi: 10.1117/12.2308737; https://doi.org/10.1117/12.2308737
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