Paper
23 July 1993 Deep Ti implantation by multipulse ruby laser irradiation of a LiNbO3 single crystal with Ti deposit: implantation performances, numerical analysis and optical characteristics of implanted structures
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19838X (1993) https://doi.org/10.1117/12.2308740
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
We investigate the role of the ambient gas nature and pressure, and the influence of the laser pulse total duration and temporal shape in the coupling of the incident laser light to a metallic surface at intermediate laser intensities (107-108Wcm-2). A plasma is accompanying then the action of the laser pulse acting as an active moderator among laser beam and target and determining the final status of the contact surface. There is an insignificant substance ablation in this regime, an essential requirement for surface processing. We choose a pulsed CO2 laser source because at this laser wavelength in mid IR, the decrease of plasma initiation threshold in front of a solid sample is among the largest ones observed (i.e. hundred times). Laser source is operated at a 10Hz frequency repetition rate. In order to obtain a homogeneous spot, the laser beam is diaphragm ed. A part of the laser beam is directed to a fast photon-drag detector. The pulse energy is monitored with a precise joulemeter. The typical temporal shape of the pulses -which consists of a proeminent first spike
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Bertolotti "Deep Ti implantation by multipulse ruby laser irradiation of a LiNbO3 single crystal with Ti deposit: implantation performances, numerical analysis and optical characteristics of implanted structures", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19838X (23 July 1993); https://doi.org/10.1117/12.2308740
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