23 July 1993 Large area polarization device
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 198392 (1993) https://doi.org/10.1117/12.2308745
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
ZnSe-ZnTe heterojunction have been produced by liquid-phase epitaxy of ZnTe on the surface of ZnSe single crystals. In the process of growth some solid solution of ZnSexTei, has been formed at the interface. Different layers of this mixed crystalline material had various composition which depends on their position in a space between the components of heterojunction. In this note we report some information about the composition variation of solid solutions obtained from the Raman spectra measurements.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. V. Goltser, I. V. Goltser, } "Large area polarization device", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 198392 (23 July 1993); doi: 10.1117/12.2308745; https://doi.org/10.1117/12.2308745
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