23 July 1993 Photo-induced memory effects in amorphous selenium-based materials
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19839O (1993) https://doi.org/10.1117/12.2308767
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
The mixed crystals Sn2P2(SexS1_x)6 are proper rerrolectrics who- se phase diagram contains a Llfshltz point that separates the transi- tions to the commensurate and Incommensurate (IC) phases. The P2 /c Pc phase transition of second order in Sni)P0S2 occurs at Ti"' 338 K. When some of the sulphur is replased by selenium, the line of conti nuous phase transitions splits smoothly into lines of transitions of the fint order - T1(x) and second order - To(x) that bound the IC phase'. _
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. I. Mikla, V. I. Mikla, } "Photo-induced memory effects in amorphous selenium-based materials", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19839O (23 July 1993); doi: 10.1117/12.2308767; https://doi.org/10.1117/12.2308767
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