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Raman scattering was employed to study the thermal crystallization of plasma deposited a-Si:H. The crystalliza- tion, experiments were carried out at 850 °C for different times. It was established that at the used temperature the crystallization proceeded in the first few minutes. The amount and size of microcrystallites did not change with the prolonged annealing.
V. S. Rondarev
"Optical nondestructive inspection as a part of modern high technologies", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1983CC (23 July 1993); https://doi.org/10.1117/12.2308863
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V. S. Rondarev, "Optical nondestructive inspection as a part of modern high technologies," Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1983CC (23 July 1993); https://doi.org/10.1117/12.2308863