Raman study of thermally crystallized amorphous silicon

P. Danesh

doi:10.1117/12.2308864

23 July 1993 Raman study of thermally crystallized amorphous silicon

P. Danesh

Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 1983CD (1993) https://doi.org/10.1117/12.2308864
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary

Abstract

The method for direct measurement of refractive index profile of gradient-index planar optical waveguides, in particular of glass waveguides made by thermal ion-exchange, is based on the step-by-step etching technique. The refractive index of the waveguide surface is determined from the measured intensity of the reflected beams using two immersion media.

Citation Download Citation

P. Danesh "Raman study of thermally crystallized amorphous silicon", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1983CD (23 July 1993); https://doi.org/10.1117/12.2308864

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