23 July 1993 Raman study of thermally crystallized amorphous silicon
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 1983CD (1993) https://doi.org/10.1117/12.2308864
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
The method for direct measurement of refractive index profile of gradient-index planar optical waveguides, in particular of glass waveguides made by thermal ion-exchange, is based on the step-by-step etching technique. The refractive index of the waveguide surface is determined from the measured intensity of the reflected beams using two immersion media.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Danesh, "Raman study of thermally crystallized amorphous silicon", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1983CD (23 July 1993); doi: 10.1117/12.2308864; https://doi.org/10.1117/12.2308864
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