23 July 1993 Raman study of thermally crystallized amorphous silicon
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Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 1983CD (1993) https://doi.org/10.1117/12.2308864
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary
Abstract
The method for direct measurement of refractive index profile of gradient-index planar optical waveguides, in particular of glass waveguides made by thermal ion-exchange, is based on the step-by-step etching technique. The refractive index of the waveguide surface is determined from the measured intensity of the reflected beams using two immersion media.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Danesh, P. Danesh, } "Raman study of thermally crystallized amorphous silicon", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1983CD (23 July 1993); doi: 10.1117/12.2308864; https://doi.org/10.1117/12.2308864
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