19 November 1993 Carrier lifetimes in periodically δ-doped MQW structures
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993); doi: 10.1117/12.162781
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The excitation dependent carrier recombination lifetime in periodically (delta) -doped strained InGaAs/GaAs multiple quantum well structures has been investigated both experimentally and theoretically. Experimentally, we find more than six orders of magnitude increase in the lifetime over that for undoped material due to the spatial separation of photogenerated carriers. This results in strong photo-optic effects and optical nonlinearities. Calculations, on the other hand, predict intrinsic recombination lifetimes in the periodically (delta) -doped material far above those found experimentally. Using secondary ion mass spectroscopy, transmission electron microscopy, cathodoluminescence imaging, and electron beam induced absorption modulation imaging we find evidence for misfit dislocation related recombination mechanisms that limit the carrier lifetime in the strained quantum well material.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anders G. Larsson, Bjorn Jonsson, Ola Sjolund, Jeffrey G. Cody, Thorvald G. Andersson, S. M. Wang, Ulf Sodervall, Daniel H. Rich, Joseph L. Maserjian, "Carrier lifetimes in periodically δ-doped MQW structures", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162781; https://doi.org/10.1117/12.162781
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KEYWORDS
Quantum wells

Absorption

Electron beams

Ions

Mass spectrometry

Modulation

Nonlinear optics

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