19 November 1993 Characterization of InP/GaInAs superlattices by spectroscopic ellipsometry
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162777
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A set of InP/GaInAs 30 periods superlattices with a wide range of barrier and well thicknesses were grown on (100) InP substrates by metal organic vapor phase epitaxy (MOVPE). Their optical response was measured at room temperature by spectroscopic ellipsometry from 1.8 to 5 eV. The nominal structures were checked by two methods of multi-layer modelling: full simulation using bulk dielectric functions for each layer and effective medium approximation, with the appropriate volume fractions. The thicknesses of well, barrier, and oxide overlayer were determined, and the effects of the interface region were discussed. The dielectric functions derived from the measured tg (psi) and cos(Delta) spectra were compared with the simulated ones obtained from the fitted structural model.
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Marco Amiotti, Marco Amiotti, Giorgio Guizzetti, Giorgio Guizzetti, Maddalena Patrini, Maddalena Patrini, Gunnar Landgren, Gunnar Landgren, } "Characterization of InP/GaInAs superlattices by spectroscopic ellipsometry", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162777; https://doi.org/10.1117/12.162777
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