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19 November 1993 Characterization of main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by optical modulation spectroscopy
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162780
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
In this paper we report experimental results on InGaAs/InAlAs single quantum wells (SQW) obtained by photoreflectance (PR) between 5 K and 450 K. In the first part of the paper we focus on the evolution of the broadening parameter of E1H1 in the lattice matched 5 nm well width sample, E1H1 and E2H2 in the lattice matched 25 nm SQW. From this study we derive information about the relative influence of interface roughness, alloy scattering, and electron phonon interactions. In the second part we apply the PR technique to the study of quantum wells near the surface in which we observe an increase of the broadening parameter. These studies show the great interest of PR technique for the qualification of materials and for the surface probe.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Baltagi, Catherine Bru, A. Tabata, Taha Benyattou, S. Moneger, A. Georgakilas, K. Zekentes, G. Halkias, Michel Gendry, V. Drouot, and Guy R. Hollinger "Characterization of main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by optical modulation spectroscopy", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162780
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