Characterization of process-induced defects in 2.6-um InGaAs photodiodes

Vladimir S. Ban; Abhay M. Joshi; Natko B. Urli

doi:10.1117/12.162766

19 November 1993 Characterization of process-induced defects in 2.6-μm InGaAs photodiodes

Vladimir S. Ban, Abhay M. Joshi, Natko B. Urli

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162766
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Planar In_XGa_1-XAs photodiodes with a cut-off wavelength of 2600 nm suitable for fiber optic and other applications at temperature of over 50 degree(s)C were the subject of this investigation. They were VPE grown on a sulphur doped InP substrate with an InAs_yP_1-y epitaxial graded layer structure in order to suppress the propagation of mismatch dislocations from layer to layer and to accommodate the large lattice parameter mismatch between the InP substrate and the In_0.88Ga_0.12As absorption layer. Deep- level-transient-spectroscopy (DLTS) was utilized as the main method in characterization of process-induced defects in the lower-doped n-type InGaAs absorber material close to the p-n junction. DLTS spectra indicate a broad distribution of energy levels corresponding to electron traps. The peaks of the distribution are located at 0.25, 0.30, and 0.42 eV below the conduction band. The DLTS spectra are pulse length dependent and the maxima shift to higher temperature with an increase of the pulse length, indicating that additional states are located deeper in the energy gap. Dislocations are the main candidates to be responsible for such a behavior. Minority carrier traps have also been detected at the InAsP/InGaAs heterojunction with an apparent energy level at E_v + 0.37 eV. Possible influences of the specific trap on the optoelectronic properties of these photodiodes are also discussed.

Citation Download Citation

Vladimir S. Ban, Abhay M. Joshi, and Natko B. Urli "Characterization of process-induced defects in 2.6-μm InGaAs photodiodes", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162766

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