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19 November 1993 Determination of the optical properties of II-VI compounds by spectroscopic ellipsometry
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162742
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
We have used spectroscopic ellipsometry to investigate the optical constants of undoped ZnSe, ZnSxSe1-x and Zn1-xCdxSe films grown by molecular beam epitaxy on GaAs. Ellipsometric modelling has allowed access to the above and below bandgap optical constants of the films. From the results given, shifts in bandgap are obtained with variation of S or Cd content. The use of a suitable dispersion equation has allowed the determination of the below-bandgap refractive index of the ZnSe films involved. Our results for the optical behavior of ZnSe films are in reasonable agreement with data obtained from a simplified model of interband transitions for single crystalline non-doped ZnSe bulk material available in recent literature.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan C. Jans, J. Petruzzello, J. M. Gaines, and Diego J. Olego "Determination of the optical properties of II-VI compounds by spectroscopic ellipsometry", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162742
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