19 November 1993 Electro-optical modulation in silicon-silicon/germanium quantum-well structures
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162773
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A new, fast, intersubband 1.55 micrometers electro-optic modulator in the SiGe/Si/CaF2-on- Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +/- 8 V/micrometers , resonant 1 - 3 conduction-intersubband absorption is predicted to given 18 dB of optical extinction for narrow-linewidth transitions. The procedure for incorporating conduction band nonparobolicity for higher lying subbands is described, and the issue of narrow linewidths is discussed.
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Lionel R. Friedman, Lionel R. Friedman, Richard A. Soref, Richard A. Soref, } "Electro-optical modulation in silicon-silicon/germanium quantum-well structures", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162773; https://doi.org/10.1117/12.162773
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