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19 November 1993 Energy shift and band offset with elastic strain in InGaSb epilayers on GaSb(100) by metalorganic chemical vapor deposition
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162758
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The effects of elastic strain induced by lattice mismatch on the effective mass and band off-set at (Gamma) point are studied in this paper. We found that the effective masses (electron, light and heavy hole) become anisotropic in a strained layer. The theoretical calculations are derived using the method of linear combination of atomic orbitals (LCAO) and the overlapping integrals are adjusted in accordance with the change of atomic distance. For unstrained and strained interfaces, the band offset ratios of 90:10 and 57:43 (conduction band:valence band) are obtained, respectively. Calculating the strained InXGa1-XSb structures with our calculated results, the excellent agreements are found between theoretical calculations and experimental results in this study, thus the parameters of our calculations are suitable for the calculations of the strained systems.
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Yan-Kuin Su, S. M. Chen, C. F. Yu, and Y. T. Lu "Energy shift and band offset with elastic strain in InGaSb epilayers on GaSb(100) by metalorganic chemical vapor deposition", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162758
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