19 November 1993 Exciton modes in quantum barriers
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162798
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
In this work, the experimental evidence of exciton confinement in the GaAs barriers of InGaAs/GaAs multiple-quantum-well structures is reported. This has been achieved by an ad hoc devised luminescence self-absorption spectroscopy method, as well as by standard photoluminescence, performed at different temperatures, which present a spectral feature at energies higher than those of bulk GaAs. The confinement energy and the linewidth depend on the barrier width, in agreement with a simple quantum mechanical model. Higher index states of the barrier exciton are also observed. The data underscore the critical importance of the choice of the sample-structure parameters for the confinement to be detectable.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F. Martelli, F. Martelli, Mario Capizzi, Mario Capizzi, Andrea Frova, Andrea Frova, A. Polimeni, A. Polimeni, Francesca Sarto, Francesca Sarto, M. R. Bruni, M. R. Bruni, M. G. Simeone, M. G. Simeone, "Exciton modes in quantum barriers", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162798; https://doi.org/10.1117/12.162798
PROCEEDINGS
7 PAGES


SHARE
Back to Top