19 November 1993 Exciton-polariton resonances in light absorption spectra of semiconductor superlattices and crystals
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162811
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
The absorption-edge spectra have been studied in the temperature range from 4 to 300 K for single-crystal CdTe, ZnTe, GaAs wafers and GaAs/(Al,Ga)As multiple quantum well (MQW) structures. In all cases the frequency integrated absorption coefficient K is found to increase monotonously with temperature T up to T = T* and to keep constant above T*. The temperatures T*, depending on semiconducting materials, might be considered as critical ones corresponding to a change in polaritonic ener~ transport mechanism due to the lack of spatial dispersion at T<T*. It was shown, that though the measured temperatures T -. o2 K correspond to much larger linewidths than could be explained by using the theoretical value of the exciton damping parameter, this discrepancy can be overcome if a temperature-dependent inhomogeneous broadening is taken into account consistently. A similar temperature dependence of K with T* = 20 K has been observed for the first time in GaAs/( Al, Ga)As MQW-structures.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ruben P. Seisyan, Ruben P. Seisyan, Vladimir A. Kosobukin, Vladimir A. Kosobukin, S. A. Vaganov, S. A. Vaganov, G. N. Aliev, G. N. Aliev, O. S. Coschug, O. S. Coschug, } "Exciton-polariton resonances in light absorption spectra of semiconductor superlattices and crystals", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162811; https://doi.org/10.1117/12.162811
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