Excitonic bistability of GaAs/Ga0.7Al0.3As ridged waveguides

Vittorio Pellegrini; Francesco Fuso; Ennio Arimondo

doi:10.1117/12.162774

19 November 1993 Excitonic bistability of GaAs/Ga_0.7Al_0.3As ridged waveguides

Vittorio Pellegrini, Francesco Fuso, Ennio Arimondo

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162774
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Transmission of dye laser light pulses through GaAs/Ga_0.7Al_0.3As ridged waveguides, with propagation parallel to the Multiple Quantum Wells (MQW) layer, was investigated. Single-mode optical fibers have been used both to deliver light into the waveguides and to collect the transmitted pulses. The obtained results show the appearance of bistable cycles for input intensities above 300 kW/cm². Room temperature fluorescence was also investigated under 6328 angstrom irradiation observing HH1 and LH1 transitions.

Citation Download Citation

Vittorio Pellegrini, Francesco Fuso, and Ennio Arimondo "Excitonic bistability of GaAs/Ga_0.7Al_0.3As ridged waveguides", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162774

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