Translator Disclaimer
19 November 1993 Fabrication and characterization of ZnSe-based blue/green laser diodes
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162806
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasing was obtained in the pulsed operation at room temperature by applying high-reflectivity facet coating and in the continuous wave operation at 77 K. The characteristic temperature was obtained to be 137 K below room temperature. The cavity parameters were investigated at 77 K for a single- quantum-well separate-confinement-heterostructure. An internal loss of 1.2 cm-1, an internal quantum efficiency of 61%, a transparency current density of 10 kA/(cm2micrometers ) and a gain factor of 0.095 cmmicrometers /A were obtained. The optical gain is improved by lowering the dislocation density in the laser structure.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ayumu Tsujimura, Shigeo Yoshii, Shigeo Hayashi, Kazuhiro Ohkawa, and Tsuneo Mitsuyu "Fabrication and characterization of ZnSe-based blue/green laser diodes", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162806
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

GaInNAs-based long-wavelength lasers grown by MOCVD
Proceedings of SPIE (June 05 2001)
State of blue-green laser diodes
Proceedings of SPIE (April 10 1996)
Pulsed single mode Yb doped fibre amplifier around 976 nm...
Proceedings of SPIE (February 17 2010)
Doping of ZnSe using gas source molecular beam epitaxy
Proceedings of SPIE (December 20 1994)
Superlattice quantum cascade lasers
Proceedings of SPIE (March 31 1999)

Back to Top