19 November 1993 Fast optical addressing using plasma gratings stabilized by deep centers in semiconductors
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162767
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
We study the subnanosecond optical addressing capabilities of semiconductors based on the diffraction properties of plasma index gratings. We use degenerate four-wave mixing experiments at 1.06 micrometers . The diffraction efficiency of the refractive index grating remains constant ((eta) equals 5 X 10-4) in the nanosecond time scale. The grating erasure is possible however using a uniform picosecond illumination: an 80% decrease of the diffraction efficiency is achieved with only 25% of the writing energy. We show that the best model to explain our experimental results is based on the plasma density modulation stabilized by charged deep centers via the electrostatic screening effect.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Gouaichault-Brugel, N. Gouaichault-Brugel, Laurent Nardo, Laurent Nardo, Michel Pugnet, Michel Pugnet, Jacques H. Collet, Jacques H. Collet, J. L. Iehl, J. L. Iehl, R. Grac, R. Grac, } "Fast optical addressing using plasma gratings stabilized by deep centers in semiconductors", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162767; https://doi.org/10.1117/12.162767
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