19 November 1993 High-detectivity 8~12-μm GaAs multi-quantum-well infrared photodetectors
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162786
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Using 45 degree(s) geometry or grating for optical coupling, three kinds of GaAs/AlxGa1-xAs multiquantum well (MQW) photodetectors having different response range, i.e., 7.50 - 8.85, 8.20 - 9.80, and 9.60 - 11.40 micrometers , have been fabricated and evaluated. High responsivity Rp > 1 X 105 V/W, high quantum efficiency (eta) > 14%, and high detectivity D(lambda )* > 3 X 1010 cmHz1/2/W, were achieved at T equals 77 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhenghao Chen, Zhenghao Chen, Junming Zhou, Junming Zhou, Defu Cai, Defu Cai, Qiang Hu, Qiang Hu, Huibin Lu, Huibin Lu, Guozhen Yang, Guozhen Yang, } "High-detectivity 8~12-μm GaAs multi-quantum-well infrared photodetectors", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162786; https://doi.org/10.1117/12.162786
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