Translator Disclaimer
Paper
19 November 1993 High-detectivity 8~12-μm GaAs multi-quantum-well infrared photodetectors
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162786
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Using 45 degree(s) geometry or grating for optical coupling, three kinds of GaAs/AlxGa1-xAs multiquantum well (MQW) photodetectors having different response range, i.e., 7.50 - 8.85, 8.20 - 9.80, and 9.60 - 11.40 micrometers , have been fabricated and evaluated. High responsivity Rp > 1 X 105 V/W, high quantum efficiency (eta) > 14%, and high detectivity D(lambda )* > 3 X 1010 cmHz1/2/W, were achieved at T equals 77 K.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhenghao Chen, Junming Zhou, Defu Cai, Qiang Hu, Huibin Lu, and Guozhen Yang "High-detectivity 8~12-μm GaAs multi-quantum-well infrared photodetectors", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162786
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top