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19 November 1993 Hot carrier model for highly nondegenerate four-wave-mixing in semiconductor laser devices
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162753
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A density matrix approach has been used to describe fast nonlinear phenomena, such as carrier heating and spectral hole burning, in semiconductor laser devices. The aim of this paper is to investigate highly non degenerate frequency mixing in semiconductor lasers amplifiers and oscillators. Coupled mode approach is used to analyze intermodulation in travelling wave laser amplifiers.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gian Paolo Bava, Pierluigi De Bernardis, and M. Tonetti "Hot carrier model for highly nondegenerate four-wave-mixing in semiconductor laser devices", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162753
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