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19 November 1993 Hot-electron-induced light emission and impact ionization in GaAs-based devices
Carlo Tedesco, Claudio Canali, Manfredo Manfredi, Andrea Neviani, Enrico Zanoni
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162763
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
In this paper, we characterize impact ionization effects in GaAs MESFETs, in AlGaAs/GaAs High Electron Mobility Transistors, HEMTs, in AlGaAs/InGaAs Pseudo-Morphic High Electron Mobility Transistors, PM-HEMTs, and AlGaAs/GaAs Heterojunction Bipolar Transistors, HBTs. Then, we correlate impact ionization and electroluminescence in each type of device, providing a deeper insight into the mechanisms responsible for the emission of photons in the high electric field regime. Finally, conclusions follow in Section 4.
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Carlo Tedesco, Claudio Canali, Manfredo Manfredi, Andrea Neviani, and Enrico Zanoni "Hot-electron-induced light emission and impact ionization in GaAs-based devices", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162763
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KEYWORDS
Ionization
Transistors
Field effect transistors
Electroluminescence
Gallium arsenide
Heterojunctions
Photons
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