19 November 1993 IV-VI on fluoride/Si structures for IR-sensor-array applications
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162784
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Epitaxial narrow gap IV-VI layers on Si-substrates offer an alternate to Hg1-xCdxTe for infrared-focal plane arrays (IRFPA) with similar ultimate sensitivities. We report on the following improvements in reaching the goal of an easily producible fully monolithic IV- VI-on-active-Si IR-FPA: (1) Up to now, compatibility with the Si-substrate was reached through use of a stacked CaF2/BaF2 buffer layer, this layer is replaced by a very thin CaF2 buffer only, which is more suitable for photolithographic processing; (2) fine resolution wet etching of the IV-VI layers is much easier and reproducible with this new type of buffer; and (3) etching of the surface was found to improve the behavior of the blocking Pb-contact towards better I-V characteristics.
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Alexander Fach, Alexander Fach, Clau Maissen, Clau Maissen, Jiri Masek, Jiri Masek, Stefan I. Teodoropol, Stefan I. Teodoropol, Hans Zogg, Hans Zogg, Harald Boettner, Harald Boettner, "IV-VI on fluoride/Si structures for IR-sensor-array applications", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); doi: 10.1117/12.162784; https://doi.org/10.1117/12.162784
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