In-situ characterization of charge-carrier kinetics in multilayers during plasma growth and etching of amorphous silicon films

Heinz-Christoph Neitzert

doi:10.1117/12.162790

19 November 1993 In-situ characterization of charge-carrier kinetics in multilayers during plasma growth and etching of amorphous silicon films

Heinz-Christoph Neitzert

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162790
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Transient Reflected Microwave Conductivity (TRMC) measurements after laser pulse excitation have been performed during processing of thin film semiconductors. In particular PECVD-deposition of hydrogenated amorphous silicon (a-Si:H) and etching of the a-Si:H films in a hydrogen plasma has been studied by this non-invasive technique for the determination of excess charge carrier concentrations, mobilities, and lifetimes. During the growth of two intrinsic amorphous silicon layers deposited under different plasma conditions on top of each other, the comparison of the photoconducting properties of these layers already during deposition is shown and compared to conventional ex-situ characterization. By analyzing the interference fringes seen in the TRMC-amplitude during amorphous silicon growth and etching on crystalline silicon wafers covered by a dielectric layer an in-situ thickness control of the a-Si:H film has been achieved. Interface characterization in double layer structures with amorphous silicon deposited on top of crystalline silicon gave an estimation of the interface recombination rate and its change during the a-Si:H growth. An evaluation of the plasma induced damage in the initial stage of the silane plasma process is demonstrated. It has been found that already a very thin layer of a-Si:H inhibits the further defect creation at the surface of the crystalline silicon.

Citation Download Citation

Heinz-Christoph Neitzert "In-situ characterization of charge-carrier kinetics in multilayers during plasma growth and etching of amorphous silicon films", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162790

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Amorphous silicon

Plasma

Plasma etching

Etching

Silicon films

Crystals

Multilayers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years