Intersubband transitions of optically excited excitons in quantum wells

Rosana Rodrigues; Ralph A. Hoepfel; Yasuaki Iimura; Takanari Yasui; Yusaburo Segawa; Yoshinobu Aoyagi; Stephen M. Goodnick

doi:10.1117/12.162799

19 November 1993 Intersubband transitions of optically excited excitons in quantum wells

Rosana Rodrigues, Ralph A. Hoepfel, Yasuaki Iimura, Takanari Yasui, Yusaburo Segawa, Yoshinobu Aoyagi, Stephen M. Goodnick

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162799
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We have experimentally studied the time-evolution of the exciton population in a higher subband of GaAs quantum wells, below the free carrier continuum. The lifetime of the exciton formed by an electron of the lowest subband and a heavy hole of the second subband in GaAs quantum wells is determined by time-resolved luminescence at 130 +/- 20 ps. This result is consistent with theoretical estimations of intersubband scattering by acoustic phonon emission. The exciton lifetime in the second heavy-hole subband is considerably longer than reported values of the recombination time in the lowest exciton state at k equals 0. The excitons in the higher subband at k equals 0 can be excited selectively without exciting the lower subband at k > 0. From these findings we conclude that subband transitions of excitons in quantum wells represent a new appealing concept for optically pumped coherent sources in the meV range.

Citation Download Citation

Rosana Rodrigues, Ralph A. Hoepfel, Yasuaki Iimura, Takanari Yasui, Yusaburo Segawa, Yoshinobu Aoyagi, and Stephen M. Goodnick "Intersubband transitions of optically excited excitons in quantum wells", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162799

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